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Pinnegar, C.R., and L. Mansinha. 2003. The Bi-Gaussian S-Transform. Siam Journal on Scientific Computing. 24 (5) : 1678-1692. Faculty/Dept/Code: Faculty of Science

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20/04/2018· The main IR spectral shifts from 3371 to 3,347 cm(-1) and 1693 to 1682 cm(-1) for IMC, as well as from 3094 to 3136 cm(-1) and 1718 to 1735 cm(-1) for SAC suggested that the OH and NH groups in both chemical structures were taken part in a hydrogen bonding, leading to the formation of IMC-SAC cocrystal.

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Ab initio studies of early stages of nitride growth process on silicon carbide JOURNAL OF CRYSTAL GROWTH Tom 401 r. 2014, str. 25-29 (Artykuł) M Sznajder, E Wachowicz, Jacek Majewski: 38. Adam, Ralph: „Pałac Ludu” – nowa biblioteka w Birmingham PORADNIK BIBLIOTEKARZA Nr 10 r. 2014, str. 4-11 (Artykuł) Marta Grabowska (Tłumacz) 39.

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Silicon carbide - Wikipedia

Silicon carbide │ Technical ceramics

Silicon carbide │ Technical ceramics

Silicon carbide (SiC) is a high-performance ceramic material made of high-quality, non-oxide powders and can be manufactured to the specific requirements of a wide range of appliions. Due to its excellent tribological properties in coination with low weight, universal chemical resistance and ready availability, SiC is a frequently used

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